Electron emission device

Details Electron emission device Electron emission device

1988-04-11

1989-05-23

Edlow, Martin H.

357 52, H01L 2934

Patent

active

048335070

ABSTRACT:
An electron emission device comprises a P-type semiconductor layer which emits electron injected into the P-type semiconductor layer by utilizing the negative electron affinity state. At least one of said N-type semiconductor layer and the P-type semiconductor layer is made to have a super-lattice structure.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle
Zipperian, IEDM 1983, pp. 696-699.

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