Electron devices comprising a thin-film electron emitter

Electric lamp and discharge devices – With luminescent solid or liquid material – Vacuum-type tube

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313495, 313310, H01J 912

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active

060465425

ABSTRACT:
In a flat panel display or other type of electron device, a thin-film electron emitter (51) and/or emitter array (50) is formed in a semiconductor film (10) of, for example, hydrogenated amorphous and/or microcrystalline Si, SiC.sub.x, SiN.sub.y, SiO.sub.x N.sub.y or the like. An injector electrode (14) forms a potential barrier (.phi..sub.B) with the semiconductor film (10) at a back major surface (12) of the film (10). A front electrode (15) serves for biasing an emission area (11a) of the front major surface (11) at a sufficiently positive potential (V.sub.15) with respect to the injector electrode (14) as to inject electrons (e) over the barrier (.phi..sub.B) in the operation of the emitter (51) while controlling the magnitude of an electron accumulation layer (Ne) in the semiconductor film (10) at the emission area (11a). Under this bias condition the semiconductor film (10) supports a depletion layer from the injector electrode (14) to the electron accumulation layer (Ne), so establishing a field in which the electrons are heated and directed towards the emission area (11a). The electron emission area is a plane surface area (11a) free of the front electrode (15), to which it may be connected directly or by a gateable connection (G,29). Some of the electrons from the injector electrode (14) are emitted at the emission area (11a), while others heat electrons in the accumulation layer (Ne) to stimulate their emission. The front electrode (15) extracts excess electrons not emitted from the emission area (11a). The emitter (51) is well suited for fabrication with thin-film silicon-based technology.

REFERENCES:
patent: 4303930 (1981-12-01), Van Gorkom et al.
patent: 4516146 (1985-05-01), Shannon et al.
patent: 5090932 (1992-02-01), Dieumegard et al.
patent: 5483263 (1996-01-01), Bird et al.
patent: 5541478 (1996-07-01), Troxell et al.
Electronics Letters, Aug. 1991, vol. 27, No. 16, pp. 1459-1460.
"Diamond Cold Cathodes" by M.W. Geis et al, Applications of Diamond Films and Related Materials, Edited Tzend et al, Elsevier Science Publishers 1991.
Experiments of Highly Emissive Metal-Oxide-Semiconductor Electron Tunneling Cathode by Yokoo et al in J. Vac. Sci, Technol. B 14(3) May/Jun. 1996 pp. 2096-2099.
"Amorphous-Silicon-on-Glass Field Emitter Arrays" by Gamo et al IEEE Electron Device Letters vol. 17, No. 6, Jun. 1996 pp. 261-263.
Nitrogen Containing Gydrogenatee Amorphous Carbon for Thin-film Field Emission Cathodes, by Gehan A.J. Amaratunga, in Appl. Phys. Lett. 68(18), Apr. 29, 1996 pp. 2529-2531.
Current-Induced Defect Conductivity in Hydrogeneted Silicon-Rich Amorphous Silicon Nitride: by Shannon et al, Philosophical Magazine Letter 1995, vol. 72, No. 5, pp. 323-329.

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