Electron device which controls quantum chaos and quantum...

Details Electron device which controls quantum chaos and quantum... Electron device which controls quantum chaos and quantum...

2005-10-04

2005-10-04

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S012000, C257S014000

Reexamination Certificate

active

06952019

ABSTRACT:
An electron device which controls quantum chaos wherein a quantum chaos property is controlled extensively and externally is provided. The electron device which controls quantum chaos is manufactured by using a single material. A heterojunction provided with a first region having an electron system characterized by quantum chaos and a second region having an electron system characterized by integrability is formed. The first region and the second region are adjacent to each other, and the heterojunction is capable of exchanging electrons between the first region and the second region. A quantum chaos property of an electron system in a system formed of the first region and the second region is controlled by applying to the heterojunction an electric field having a component perpendicular to at least a junction surface.

REFERENCES:
patent: 5105232 (1992-04-01), del Alamo et al.
patent: 61296765 (1986-12-01), None

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