Electron device using oxide semiconductor and method of...

Details Electron device using oxide semiconductor and method of... Electron device using oxide semiconductor and method of...

2008-05-19

2010-12-21

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S072000, C257SE29273

Reexamination Certificate

active

07855379

ABSTRACT:
In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.

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patent: WO2005093852 (2005-10-01), None
Nikkei Microdevices, Feb. 2006, p. 73, Fig. 7.
Nomura et al., “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, vol. 432, Nov. 25, 2004, pp. 488-492.
English Translation of Nikkei Microdevices, Feb. 2006, p. 73, Fig.7 (2 sheets).

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