Electron device employing a low/negative electron affinity elect

Details Electron device employing a low/negative electron affinity elect Electron device employing a low/negative electron affinity elect

1991-07-18

1994-02-01

LaRoche, Eugene R.

Electric lamp and discharge devices: systems

Plural power supplies

Plural cathode and/or anode load device

3151694, 313346R, 257 77, H05B 4100

Patent

active

052835014

ABSTRACT:
Electron devices employing electron sources including a material having a surface exhibiting a very low
egative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000.ANG. are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices.

REFERENCES:
patent: 3699404 (1972-10-01), Simon et al.
patent: 4040074 (1977-08-01), Hara et al.
patent: 4084942 (1978-04-01), Villalobos
patent: 4498952 (1985-02-01), Christensen
patent: 4721885 (1988-01-01), Brodie
patent: 4908539 (1990-03-01), Meyer
patent: 5180951 (1993-01-01), Dworsky et al.
M. W. Geis, J. A. Gregory, B. B. Pate, "Capacitance-Voltage measurements on metal-SiO.sub.2 -diamond structures fabricated with (100)-and (111)-oriented substrates," IEEE Trans. Electron Devices, vol. 38, pp. 619-626, Mar. 1991.

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