Electron device

Details Electron device Electron device

1976-11-24

1978-05-09

Wojciechowicz, Edward J.

357 4, 357 34, 357 41, 357 59, H01L 2978

Patent

active

040890228

ABSTRACT:
An electron device comprising (i) a semiconductor element which includes a semiconductor region A of a first conductivity type, a semiconductor region B of a second conductivity type adjoining the region A, and a semiconductor region C of the second conductivity type adjoining the region A and isolated from the region B by the region A, and in which on a surface extending from the region B via the region A to the region C, a gate electrode is provided through an insulating film, (ii) means for holding a potential of the gate electrode so that a potential of minority carriers in a surface portion of the region A underneath the gate electrode may become lower than a potential in an inner portion of the region A, (iii) means for applying a forward bias voltage between the region A and the region B, and (iv) means for applying to the region C a potential by which a potential for the minority carriers becomes lower in the region C than in the region B. The electron device is capable of such operations as amplification, oscillation and memory under an extraordinarily low supply voltage, and is extraordinarily low in the power consumption.

REFERENCES:
patent: 3967295 (1976-06-01), Stewart
patent: 3974515 (1976-08-01), Ipri et al.

Affiliated with

Also associated with

Rating

Electron device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electron device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2360759