Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1994-09-22
1996-09-03
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 77, 313309, 313355, 445 50, H01J 102, H01J 114
Patent
active
055526136
ABSTRACT:
An electron device of the present invention comprises an i-type diamond layer formed on a substrate, and an n-type diamond layer formed on the i-type diamond layer and having a first surface region formed flatly and a second surface region containing an emitter portion, which are set in a vacuum container, in which the emitter portion formed of the n-type diamond has a bottom area 10 or less .mu.m square and projects relative to the first surface region. In the n-type diamond layer, a difference is fine between the conduction band and the vacuum level. Also, since the n-type diamond layer is doped with an n-type dopant in a high concentration, metal conduction is dominant as conduction of electrons. Therefore, setting the temperature of the substrate at a predetermined temperature and generating an electric field near the surface of the emitter portion, electrons are emitted with a high efficiency from the tip portion of the emitter portion into the vacuum. Even though the emitter portion does not have a tip portion formed in a very fine shape, electrons can readily be taken out into the vacuum by the field emission with relatively small field strength. Consequently, the emission current and the current gain increase and the current density in the emitter portion decreases, thus increasing the withstand current or withstand voltage.
REFERENCES:
patent: 5138237 (1992-08-01), Kane et al.
patent: 5341063 (1994-08-01), Kumar
Geis et al., "Diamond Cold Cathode", IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1, 1991, pp. 456-459.
J. F. Prins, "Bipolar transistor action in ion implanted diamond", Applied Physics Letters, vol. 41, No. 10, Nov. 15, 1982, pp. 950-052.
Nishibayashi Yoshiki
Shikata Shin-ichi
Tomikawa Tadashi
Monin, Jr. Donald L.
Sumitomo Electric Industries Ltd.
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