Electron cyclotron resonance plasma source

Details Electron cyclotron resonance plasma source Electron cyclotron resonance plasma source

1989-03-09

1992-07-28

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 118 501, 118723, H01L 2100

Patent

active

051338262

ABSTRACT:
A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons through an outlet at one axial end of the chamber. The circumferential magnets in the symmetrical chamber cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low gas pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics. A magnetic field free region is formed between the plasma forming region containing the microwave power source and the circumferential magnets in order to also produce uniformity of plasma distribution in a plasma stream approaching the outlet. Thus, with specimens aranged in communication with the outlet, the above characteristics are maintained for the plasma stream over substantial transverse dimensions larger than the specimen.

REFERENCES:
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4778561 (1988-10-01), Ghanbari
patent: 4844767 (1989-07-01), Okudaira et al.

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