Electron cyclotron resonance apparatus comprising wafer cooling

Coating apparatus – Gas or vapor deposition – With treating means

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118725, 118728, 118729, 156345, C23C 1650, H01L 2100

Patent

active

053543823

ABSTRACT:
An electron cyclotron resonance apparatus for treating a wafer by plasma generated by utilizing a resonance of electrons. The apparatus is constructed to improve a temperature uniformity of a wafer by injecting helium as a heat transfer medium between the wafer and a wafer pedestal on which the wafer is laid and thereby transferring a heat from the wafer to the wafer pedestal. The apparatus is also constructed to move a desired wafer treating position. As a result, it is possible to fabricate semiconductor devices having a superior performance.

REFERENCES:
patent: 5033538 (1991-07-01), Wagner et al.
patent: 5078851 (1992-01-01), Nishihata et al.
patent: 5228501 (1993-07-01), Tepman et al.
patent: 5238499 (1993-08-01), van de Ven et al.

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