Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1984-02-07
1984-11-06
Massie, Jerome
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
204298, 250423R, 3133591, 3133601, 3133611, 3133621, 3133631, C23C 1500
Patent
active
044810628
ABSTRACT:
An electron-bombardment ion source includes means defining a chamber for containing an ionizable gas together with means for introducing such gas into that chamber. Disposed therein is an anode and an electron-emissive cathode. The potential impressed between the anode and the cathode to effect electron emission at a sufficient velocity to ionize the gas. Also included are means for accelerating ions out of the chamber together with means for establishing a magnetic field within the chamber that increases the efficiency of ionization of the gas by the electrons. Mounted within the chamber is an anode of non-magnetic material that defines an essentially continuous and smooth surface which encloses substantially all of the volume within which the ionization occurs except the exit for the accelerated ions out of the chamber. The entire design is such as to ensure ready removability of the different components for quick and easy cleaning.
REFERENCES:
patent: 4377773 (1983-03-01), Herschovitch et al.
patent: 4383177 (1983-05-01), Keller et al.
patent: 4446403 (1984-05-01), Cuomo et al.
Crow et al., "High Performance . . . Source" IEEE Transactions on Plasma Science, vol. PS-6, No. 4 (12/1978) pp. 535-538.
Hughes William E.
Kaufman Harold R.
Robinson Raymond S.
LandOfFree
Electron bombardment ion sources does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electron bombardment ion sources, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron bombardment ion sources will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1041188