Electron-bombarded silicon spatial light modulator

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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250213VT, 313524, 350393, G02F 103, H01V 3150

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active

046182179

ABSTRACT:
An electron bombarded silicon spatial light modulator in which electrons leaving a microchannel plate amplifier are accelerated to penetrate a silicon photodiode forming electron-hole pairs therein and resulting in significant current gains.

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