Electron bombarded semiconductor device with doubly-distributed

Amplifiers – With semiconductor amplifying device – Including atomic particle or radiant energy impinging on a...

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330 46, 315 3, H03F 308

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043284663

ABSTRACT:
An electron bombarded semiconductor amplifier including an elongated envelope having an electron gun projecting a sheet electron beam towards a distributed element semiconductor target which propagates an output signal including a single extended area semiconductor diode or a plurality of series-connected semiconductor diodes which are reverse biased and a doubly-distributed deflection means adapted to receive an input signal and cooperate with said sheet electron beam to deflect the beam in accordance with an input signal in synchronism with electron beam velocity and target signal propagation velocity to strike the target and generate an amplifier output signal.

REFERENCES:
patent: 3050657 (1962-08-01), Branch, Jr.
patent: 3234476 (1966-02-01), Sackinger
patent: 3376464 (1968-04-01), Loti et al.
patent: 3433994 (1969-03-01), Gibson, Jr.
patent: 3504222 (1970-03-01), Fukushima
patent: 3694689 (1972-09-01), Odenthal et al.
patent: 3696266 (1972-10-01), Nishino et al.
patent: 3749961 (1973-07-01), Bates et al.
patent: 3818363 (1974-06-01), Carter et al.
patent: 3922616 (1975-11-01), Weiner
patent: 4045705 (1977-08-01), Smith et al.
Taylor, Electron Beam Semiconductor Amplifier, 1970 Conf. on Electron Device Techniques.

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