Electron beam writing system and electron beam writing method

Details Electron beam writing system and electron beam writing method Electron beam writing system and electron beam writing method

2006-02-17

2008-09-09

Berman, Jack I. (Department: 2881)

Radiant energy

Means to align or position an object relative to a source or...

C250S492210, C250S492220, C250S492300

Reexamination Certificate

active

07423274

ABSTRACT:
An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.

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patent: 2004-071690 (2002-08-01), None
patent: 2004-214435 (2003-01-01), None
Y. Sakitani et al., “Electron-Beam Cell-Projection Lithography System”, J. Vac. Sci. Technol. B., vol. 10, No. 6 (Nov./Dec. 1992), pp. 2759-2763.
Kazumi Iwadate et al., “A Novel-High-Speed Nanometric Electron Beam Lithography System: EB-F”, J. Vac. Sci. Technol. B., vol. 5, No. 1 (Jan./Feb. 1987), pp. 75-78.

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