Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-05-19
1995-02-07
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250396R, 250396ML, G21K 1093
Patent
active
053877993
ABSTRACT:
An electron beam writing system which permits a relatively low voltage to be applied to perform high speed focus correction with high accuracy. The electron beam writing system includes a focus corrector arranged inside a lens which provides the largest product of the magnification factors of the lens and all succeeding lenses and the optical path length of the lens at issue. Thus, the electron beam provides high sensitivity and a small change in the magnification ratio due to the correction.
REFERENCES:
patent: 4075485 (1978-02-01), Lijewski et al.
patent: 4701620 (1987-10-01), Okumura et al.
patent: 5099133 (1992-03-01), Yamada
patent: 5136167 (1992-08-01), Langner et al.
patent: 5168166 (1992-12-01), Hayakawa et al.
patent: 5283440 (1994-02-01), Sohda et al.
Proceedings of Autumn Meeting of Japan Society of Precision Engineering, (1987), pp. 565-566.
J. Vac. Sci. Technology, B9(6), Nov./Dec. 1991, pp. 2940-2943.
Itoh Hiroyuki
Kato Shin-ichi
Sohda Yasunari
Todokoro Hideo
Berman Jack I.
Beyer James
Hitachi , Ltd.
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