Electron beam writing method, fine pattern writing system,...

Details Electron beam writing method, fine pattern writing system,... Electron beam writing method, fine pattern writing system,...

2009-03-25

2011-11-01

Maskell, Michael (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492300

Reexamination Certificate

active

08049190

ABSTRACT:
When writing the shapes of elements of a fine pattern on a substrate by microscopically vibrating the electron beam back and forth in a radial direction of the substrate or in a direction orthogonal to the radial direction and deflecting the electron beam in a direction orthogonal to the vibration direction to scan the electron beam so as to completely fill the shapes of the elements, a proximity-effect correction is performed according to the arrangement density of the elements in which the amount of dose is adjusted by setting the deflection speed faster for the writing of an element in a densely arranged region than for the writing of an identical element in a sparsely arranged region.

REFERENCES:
patent: 4980567 (1990-12-01), Yasuda et al.
patent: 6503671 (2003-01-01), Nakajima
patent: 7026098 (2006-04-01), Komatsu et al.
patent: 2004177783 (2004-06-01), None
patent: 2006-184924 (2006-07-01), None

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