Electron beam writing method and system using large range deflec

Details Electron beam writing method and system using large range deflec Electron beam writing method and system using large range deflec

1987-06-30

1989-04-04

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, 250398, H01J 37304

Patent

active

048188859

ABSTRACT:
This system employs writing of lithographic patterns with a shaped electron beam exposure system which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field confined to local areas on the workpiece, which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field is possible because the quality requirements demanded from the shaped electron beam are less for detecting the locations of such registration marks at the various locations on the wafer.

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patent: 4494004 (1985-01-01), Mauer et al.
patent: 4544846 (1985-10-01), Langner et al.

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