Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-04-29
2000-09-05
Berman, Jack
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25049222, H01J 37302
Patent
active
061147095
ABSTRACT:
Electron-beam transfer-exposure methods and apparatus are disclosed that exhibit a small amount of mismatch between required transfer accuracy and throughput, and that appropriately adjust transfer and exposure conditions to match particular aspects of the semiconductor circuit layer to be transferred. According to the method, a pattern region on a reticle 40 is divided into a plurality of subfields. Each subfield is regarded as an exposure unit while changing the optical conditions. When exposing a pattern that has a small filling factor, the transfer is carried out by either the image-forming action of a first projection lens 42 and a second projection lens 43 only or by operating several deflectors only. When exposing a pattern that has a large filling factor, in addition to the image-forming action of the projection lenses, the transfer is carried out by operating axis-shifting deflectors and by operating electron-beam deflectors that reduce aberrations.
REFERENCES:
patent: 5545902 (1996-08-01), Pfeiffer et al.
patent: 5747819 (1998-05-01), Nakasuji et al.
patent: 5798196 (1998-08-01), Okino
Hosokawa, "Systematic Elimination of Third Order Aberrations in Electron Beam Scanning System," Optik 56:21-30 (1980).
Berman Jack
Nikon Corporation
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