Electron beam testing of integrated circuits

Details Electron beam testing of integrated circuits Electron beam testing of integrated circuits

1988-01-04

1989-01-31

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158D, 324 73R, 250310, 250311, G01N 2300, G01R 3128

Patent

active

048018791

ABSTRACT:
An apparatus and a method for monitoring the functioning of an integrated circuit in operation using an electron beam directed to a particular node of the circuit which is of interest and measuring the energy of the secondary electrons emitted, in which the energy measurement is made using a filter grid, the bias on which is set by comparing a voltage representing the rate of receipt of secondary electrons past the filter grid with a reference voltage and adjusting the bias in response to the comparison so as to reduce the number of electrons received. A current is produced proportional to the difference between the two voltages and applied to charge a capacitor, the voltage on which is used to set the voltage on the filter grid. The electron beam may be pulsed and the comparison gated in synchronism with the pulsing but delayed relative to it so that the control of the filter grid bias is effected only when the signal due to the secondary electrons emitted in response to the beam pulse is received by the comparator.

REFERENCES:
patent: 4539477 (1985-09-01), Feuerbaum et al.
patent: 4658137 (1987-04-01), Garth et al.
patent: 4721855 (1988-01-01), Fazekas
patent: 4721910 (1988-01-01), Bokor et al.
Feuerbaum; "VLSI Testing Using Electron Probe"; Scanning Electron Microscopy.

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