Electron beam test system and electron beam test method

Data processing: measuring – calibrating – or testing – Testing system – Of circuit

Reexamination Certificate

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C324S754120, C250S310000

Reexamination Certificate

active

06839646

ABSTRACT:
An electron beam test system which can determine whether a potential is high or low for a DC signal or a signal having no potential change before the time of observation. The electron beam test system obtains potential contrast data for analysis by irradiating electron beam to a semiconductor integrated circuit device which is an analysis object. This system has a tester which supplies a test pattern signal for analysis to the semiconductor integrated circuit device and holds the supplied test pattern signal at a given time; an electron gun which irradiates electron beam to the semiconductor integrated circuit device in response to the hold; and a detector which detects the potential contrast data of the semiconductor integrated circuit device which is irradiated with electron beam.

REFERENCES:
patent: 5995647 (1999-11-01), Hamada
patent: 6459282 (2002-10-01), Nakamura
patent: 6479983 (2002-11-01), Ebiya
patent: 61-035367 (1986-02-01), None
patent: 3-254053 (1991-11-01), None
patent: 7-092238 (1995-04-01), None
patent: 8-184651 (1996-07-01), None
patent: 9-026464 (1997-01-01), None
patent: 9-033616 (1997-02-01), None
patent: 11-242071 (1999-09-01), None
U.S. patent application Ser. No. 10/226,140, Ishii, filed Aug. 23, 2002.
Ishii et al., “Study of Electron-Beam Probe for LSI Process Failure Analysis”, Technical Report of IEICE R2001-31, SSS2001-26(2001-12), pp. 13-20, Nov. 8, 2001. (w/abstract).

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