Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1983-07-01
1985-01-15
Smith, Alfred E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37302
Patent
active
044940041
ABSTRACT:
An electron beam method and apparatus, for writing patterns, such as on semiconductor wafers, in which the writing field is divided into a large number of overlapping subfields with a predetermined periodicity. Subfield to subfield moves are made in a stepped sequential scan, such as raster, while patterns, within a subfield, are addressed using vector scan and written using a sequential scan. Significant improvement in throughput results by the use of this electron beam method and apparatus which preferably employs magnetic deflection for the sequential scanning the subfields and electric deflection for vector scanning within the subfield.
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Tarvi et al., "Electron Beam Exposure System for Integrated Circuits", Microlelectronics & Reliability, Pergamon Press, vol. 8, 1969, pp. 101-111.
Woodard et al., "Electron Beam Deflection Theoretical and Practical Limits of Performance", Extended Abstracts, vol. 80-81, May 1980, Princeton, p. 610.
Mauer, IV John L.
Michail Michel S.
Woodard Ollie C.
Brown Edward W.
Fields Carolyn E.
International Business Machines - Corporation
Smith Alfred E.
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