Radiant energy – Ion generation – Field ionization type
Patent
1995-12-05
1998-09-22
Berman, Jack I.
Radiant energy
Ion generation
Field ionization type
250423F, 313310, 313311, 313336, H01J 3706
Patent
active
058118195
ABSTRACT:
An electron beam source is provided with an electron forming means such as a doped layer of Si for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided. An electron beam source apparatus and electron beam apparatus incorporating the electron beam source as defined above are also disclosed.
REFERENCES:
patent: 3970887 (1976-07-01), Smith et al.
patent: 4379250 (1983-04-01), Hosoki et al.
patent: 5534743 (1996-07-01), Jones et al.
Pierce et al., Review of Scientific Instruments, vol. 51, No. 4, Apr. 1980, pp. 478-499.
"Electron and Ion Beam Handbook", Second Edition, (Nikkan Kogyo Shinbunsha (translated), 1986), Edited by Nihon Gakujutsu Shinkokai, No. 132 Committee, pp. 145-151.
Kuroda Katsuhiro
Ohshima Takashi
Shinada Hiroyuki
Berman Jack I.
Hitachi , Ltd.
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