Electron beam proximity exposure apparatus and mask unit...

Details Electron beam proximity exposure apparatus and mask unit... Electron beam proximity exposure apparatus and mask unit...

2005-05-17

2005-05-17

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492230, C430S005000

Reexamination Certificate

active

06894295

ABSTRACT:
In an electron beam proximity exposure apparatus comprising an electron beam source, which emits a collimated electron beam, a mask substrate on which a plurality of masks with apertures are formed, a mask moving mechanism, which moves the mask substrate, and a stage, which holds and moves an object, the mask moving mechanism moves the mask substrate so that one of the plurality of masks is arranged on a path of the electron beam in proximity to a surface of the object, and a pattern corresponding to the aperture of the one of the plurality of masks is exposed on the surface of the object with the electron beam having passed through the aperture. Thus, the frequency of taking the mask out of the apparatus to exchange the mask is reduced, so that the throughput of the apparatus is improved.

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High Throughput Submicron Lithography with Electron Beam Proximity Pringing, H. Bohlen et al., Solid State Technology, Sep. 1984, pp. 210-217.
Low Energy Electron-Beam Proximity Projection Lithography: Discover of Missing Link, Takao Utsumi, J. Vac. Sci. Technol. B 17(6), Nov./Dec. 1999, pp. 2897-2902.

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