Electron beam proximity effect correction by reverse field patte

Details Electron beam proximity effect correction by reverse field patte Electron beam proximity effect correction by reverse field patte

1982-06-17

1984-07-31

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 430296, H01J 300

Patent

active

044632657

ABSTRACT:
In electron beam lithography, a beam of incident electrons exposes a preselected circuit pattern in a thin resist layer deposited on top of a substrate to be etched. Some of the electrons scatter from the substrate back into the resist layer producing an undesired exposure which produces variable resolution of features. In accordance with the disclosed technique, the region of the resist which is complementary to the desired circuit pattern is also exposed by an electron beam which has been adjusted to produce an exposure approximating that due to backscattering. This additional exposure removes the spatial variability in resolution attainable by the electron beam lithography.

REFERENCES:
patent: 3681103 (1972-08-01), Brown
patent: 3971860 (1976-07-01), Broers
patent: 4264711 (1981-04-01), Greeneich

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