Electron beam projection utilizing multiple exposures with...

Details Electron beam projection utilizing multiple exposures with... Electron beam projection utilizing multiple exposures with...

2001-03-27

2003-01-07

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S005000, C430S296000, C430S942000, C250S492200

Reexamination Certificate

active

06503672

ABSTRACT:

BACKGROUND
Electron beam projection can be used for many purposes, including formation of features on semiconductor substrates. The power, i.e., current, may be intentionally increased in order to increase the throughput of the process. However, as the current used by the tools increases, the interactions between electrons may also increase. These interactions may cause image blurring and may cause field uniformity degradation of critical dimension control. Because of these imaging aberrations, the critical dimension control may degrade as the total beam current is increased.


REFERENCES:
patent: 5908733 (1999-06-01), Onoda
patent: 6117600 (2000-09-01), Nakasuji

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