Electron-beam projection-microlithography apparatus and methods

Details Electron-beam projection-microlithography apparatus and methods Electron-beam projection-microlithography apparatus and methods

1997-12-18

1999-08-03

Metjahic, Safet

Photocopying

Projection printing and copying cameras

Step and repeat

2504922, G03B 2742, A61N 500

Patent

active

059332174

ABSTRACT:
Electron-beam projection-microlithography apparatus are disclosed for transferring a reticle pattern image to a substrate using an electron beam. The apparatus includes, along an optical axis in the trajectory direction of the electron beam, an electron gun, a field-limiting aperture for limiting the field of the electron beam emitted from the electron gun. A reticle can be positioned to receive and selectively transmit an electron beam transmitted by the field-limiting aperture. The apparatus further includes a blanking aperture positioned intermediate the field-limiting aperture and the reticle, the blanking aperture selectively operable to absorb the electron beam transmitted by the field-limiting aperture, a detector for detecting the current level of the electron beam absorbed by the blanking aperture, and a controller for adjusting time periods that a substrate is exposed to the electron beam transmitted by the reticle, wherein the time periods of exposure are adjusted according to the detected current level of the electron beam absorbed by the blanking aperture.

REFERENCES:
patent: 4199689 (1980-04-01), Takagawa
patent: 5180919 (1993-01-01), Oae et al.
patent: 5288567 (1994-02-01), Sakamoto
patent: 5326979 (1994-07-01), Kawasaki et al.
patent: 5449915 (1995-09-01), Yamada et al.
patent: 5633507 (1997-05-01), Pfeiffer et al.
patent: 5763893 (1998-06-01), Nakasuji
Electron-Ion Beam Handbook, Eiji Sugeta, Dec. 20, 1973 (pp. 27-28).

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