Electron beam projection lithography

Details Electron beam projection lithography Electron beam projection lithography

1984-07-20

1985-11-19

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

313542, H01J 37317, H01J 4016

Patent

active

045544581

ABSTRACT:
The photoresist film 12 on the surface of a wafer 11 is exposed through the shadow pattern which is generated by a transmission mask 13 arranged a short distance therefrom when the mask is subjected to a large-area electron beam. The source of the electron beam is an unstructured photocathode 16 on an ultraviolet transparent carrier such as, quartz glass 17 which is subjected to UV radiation from the backside. The electrons exiting from layer 16 are accelerated by a homogeneous electric field 14 towards the mask 13 and shaped to form a homogeneous collimated electron beam. By means of laterally positioned electrostatic deflecting electrodes 19a, 19b, the entire electron beam can be tilted relative to the wafer for adjusting the mask pattern.

REFERENCES:
patent: 3832561 (1974-08-01), O'Keefe
patent: 4460831 (1984-07-01), Oettinger et al.

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