Electron-beam programmable semiconductor device structure

Details Electron-beam programmable semiconductor device structure Electron-beam programmable semiconductor device structure

1979-08-23

1981-10-06

Walton, Donald L.

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 29576B, 29584, H01L 2104

Patent

active

042927293

ABSTRACT:
A semiconductor device structure is provided in which an electrically isolated or "floating" conductor is adapted to receive electric charge from an electron beam. The resultant stored charge provides the basis for useful electronic functions such as floating gate MOS read-only-memories.

REFERENCES:
patent: 3660819 (1972-05-01), Bentchkowsky
patent: 3688389 (1972-09-01), Nakanuma et al.
patent: 3996657 (1976-12-01), Simko et al.
Speth, Electron Beam Control of FET Characteristic, IBM Technical Disclosure Bulletin, vol. 8, No. 4, Sep. 1965.
Davis et al., Automatic Registration in an Electron-Beam Exposure System, IEEE Int. Electron Device Meeting (12/76), Tech. Dig., pp. 440-442.

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