Electron beam patterning method and apparatus with correction of

Details Electron beam patterning method and apparatus with correction of Electron beam patterning method and apparatus with correction of

1981-03-02

1983-06-28

Anderson, Bruce C.

Radiant energy

Means to align or position an object relative to a source or...

2504922, H01J 3700

Patent

active

043907881

ABSTRACT:
An electron beam pattern is formed on an object while correcting the deflection distortion of electron beam upon controlling the deflection of electron beam. Prior to pattern formation, reference marks provided on the object are scanned by electron beam to measure their positions, and a processing unit determines correction data for correcting the deflection distortion through interpolation on the basis of results by interpolation. Upon actual pattern formation, data necessary for forming a pattern is corrected by the correction data to be thus produced as a deflection signal for deflecting the electron beam. As a result, the deflection distortion can precisely be corrected for even though the physical performance of the deflector system is slightly poor.

REFERENCES:
patent: 3644700 (1972-02-01), Kruppa et al.
patent: 3900736 (1975-08-01), Michail et al.
patent: 4119854 (1978-10-01), Tanaka et al.

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