Electron beam pattern transfer system having an autofocusing mec

Details Electron beam pattern transfer system having an autofocusing mec Electron beam pattern transfer system having an autofocusing mec

1983-08-22

1986-02-25

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3730

Patent

active

045729565

ABSTRACT:
An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.

REFERENCES:
patent: 3551734 (1970-12-01), O'Keeffe
patent: 3843916 (1974-10-01), Trotel et al.
patent: 3983401 (1976-09-01), Livesay
patent: 4008402 (1977-02-01), O'Keeffe
patent: 4469949 (1984-09-01), Mori et al.
Philips Technical Review, vol. 37, No. 11/12, 1977, pp. 347-356, Eindhoven, NL; J. P. Scott: "Electron-Image Projector".
Patents Abstracts of Japan, vol. 5, No. 59(E-53)(731), Apr. 22, 1981; & JP A 56 10927 (Cho Lsi Gijutsu Kenkyu Kumiai), 03-02-1981.
R. Ward; Developments in Electron Image Projection; J. Vac. Sci. Technol., 16 (6), Nov./Dec. 1979.

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