Electron beam matrix deflector manufactured by etching divergent

Details Electron beam matrix deflector manufactured by etching divergent Electron beam matrix deflector manufactured by etching divergent

1978-03-13

1980-01-08

Lazarus, Richard B.

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

156644, 156663, H01J 914

Patent

active

041820100

ABSTRACT:
A matrix deflector, for deflecting an electron beam passing therethrough, is fabricated of a pair of members of photosensitive insulating material which are each exposed to a pattern of photons, and then developed to form a pattern of substantially parallel slots through each member; the members are positioned one above the other with the slots thereof orthogonally arrayed. The slots diverge in the direction of electron beam passage through each member to provide an exit aperture wider than the entrance aperture and prevent the deflected beam from striking the edge of the lens member at maximum deflection. The apertures form a set of parallel bars which are coated with a conductive material to facilitate production of deflecting electrostatic fields within each slot.

REFERENCES:
patent: 2628160 (1953-02-01), Stookey
patent: 2806958 (1957-09-01), Zunick
patent: 3680184 (1972-08-01), Greene
patent: 3802972 (1974-04-01), Fleischer et al.

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