Electron beam lithography using an aperture having an array of r

Details Electron beam lithography using an aperture having an array of r Electron beam lithography using an aperture having an array of r

1992-03-27

1993-10-05

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3704

Patent

active

052508129

ABSTRACT:
An electron beam lithography apparatus is disclosed which has an aperture plate provided with an aperture including an array of repeated unit patterns and an ordinary aperture of a rectangular shape. A region free of the influence of a proximity effect is delineated using the former aperture, and a region affected by the proximity effect is delineated using the latter aperture. The number of repeated unit patterns included in the former aperture is determined considering the number of repeated unit patterns included in a pattern array to be delineated on a substrate. Thereby, the number of electron beam shots is reduced. A plurality of apertures having slightly different aperture widths may be provided for always keeping a pattern line width constant.

REFERENCES:
patent: 4243866 (1981-01-01), Pfeiffer et al.
patent: 5036209 (1991-07-01), Kataoka et al.
Ouyou Buturi Yokoushy (Preliminary Transaction of Applied Physics) 27a-K-5 to 27a-K-7, 1989 Autum pp. 451-452 (English translation) p. 4 only.
Proc. of 1990 Intern. Microprocess Conference pp. 44-47.

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