Electron beam lithography system having improved electron gun

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492200, C313S542000, C313S530000, C313S531000, C313S539000, C313S541000, C313S544000

Reexamination Certificate

active

07095037

ABSTRACT:
An electron beam lithography system has an electron gun including at least one laser that is operable in a first mode to generate electrons for lithography. The electron beam lithography system is operable in a second mode to regenerate the photocathode of the electron gun by application of the laser. The photocathode includes a layer of cesium telluride.

REFERENCES:
patent: 4390789 (1983-06-01), Smith et al.
patent: 4460831 (1984-07-01), Oettinger et al.
patent: 4639638 (1987-01-01), Purcell et al.
patent: 4694178 (1987-09-01), Harte
patent: 4788514 (1988-11-01), Fox
patent: 4820927 (1989-04-01), Langner et al.
patent: 5038072 (1991-08-01), Beghin
patent: 5386221 (1995-01-01), Allen et al.
patent: 5533570 (1996-07-01), Streich et al.
patent: 5684360 (1997-11-01), Baum et al.
patent: 5729022 (1998-03-01), Veneklasen et al.
patent: 5814821 (1998-09-01), Reusch et al.
patent: 5960013 (1999-09-01), Sheffield
patent: 6724002 (2004-04-01), Mankos et al.
patent: WO 98/48443 (1998-10-01), None
patent: WO 99/03016 (1999-01-01), None
patent: WO 99/03022 (1999-01-01), None
patent: WO 99/47978 (1999-09-01), None
D.H. Dowell, “433 MHz High Duty Photocathode RF Gun Experiments”, PERL Workshop, Jan. 22-23, 2001.
JLAB Monthly Report IR Demo FEL Upgrad and Comissioning Project, Jun. 1998.
Michelato et al., “Cs2Te Photocathode for the TTF Injector II”.
IBM Technical Bulletin, Oct. 1989, “Improving Brightness and Current of Photoelectron Lithography”.
di Bona et al., “Auger and X-ray photoemission spectroscopy study of Cs2Te photocathodes”, J. Appl. Phys. 80 (5) 1996, pp. 3024-3030.
di Bona et al., “Formation of the Cs2Te photocathode: Auger and Photoemission Spectroscopy Study”, Proc. EPAC 2000 Conference, Vienna, Austria, http://accelconf.web.cern.ch/AccelConf/e96/PAPERS/THPL/THPL0121.PDF (Sep. 14, 2000).
Travier et al., “Candela Photo-Injector Experimental Results with a Dispenser Photocathode”, Proc. EPAC 2000 Conference, Vienna, Austria, http://accelconf.web.cern.ch/AccelConf/p95/ARTICLE/WPB/WPB01.PDF (Sep. 14, 2000).
Bluem et al., “Photocathode Electron Source Development at Advanced Energy Systems”, Proc. EPAC 2000 Conference, Vienna, Austria, http://accelconf.web.cern.ch/AccelConf/e96//PAPERS/mop5b13.PDF (Sep. 14, 2000).
Singh et al., “CsBr and CsI UV photocathodes: new results on quantum efficiency and aging”, Nucl. Instr. & Meth. A454 (2000), pp. 364-378.
H. Bluem et al., “Photocathode Electron Source Development at Advanced Energy Systems”, Proceedings of EPAC 2000, Vienna, Austria, pp. 1639-1641 (Sep. 2000).
A. di Bona et al., “Auger and x-ray photoemission spectroscopy study on Cs2Te photocathodes”, J. Appl. Phys., vol. 80, NO. 5, pp. 3024-3030 (Sep. 1996).
A. di Bona et al., “Formation of the Cs2Te Photocathode: Auger and Photoemission Spectroscopy Study”, Proc. EPAC 2000 Confrence, Vienna, Austria (Sep. 2000).
L. N. Dinh et al., “Synthesis and Characterization of Si/Cs/O nanocluster thin films with negative electron affinity”, Physical Review B, vol. 59, No. 23, pp. 15513-15522 (1999).
D. H. Dowell et al., “433 MHz High Duty Photocathode RF Gun Experiments”, PERL Workshop, Jan. 22-23, 2001.
S. H. Kong et al., “Cesium telluride photocathodes”, J. Appl. Phys., vol. 77, No. 11, pp. 6031-6038 (1995).
P. Michelato et al., “Cs2Te photocathode for the TTF Injector II”.
B.K. Singh et al., “CsBr and CsI UN photocathodes: new results on quantum efficiency and aging”, Nucl. Intsr. & Meth., A454, pp. 374-378 (2000).
C. Travier et al., “Candela Photo-Injector Experimental Results With a Dispenser Photocathode”, Proc. EPAC 2000 Conference, Vienna, Austria (Sep. 2000).
JLAB Monthly Report IR Demo FEL Upgrade and Commissioning Project, Jun. 1998.
IBM Technical Bulletin No. NB8910279, “Improving Brightness and Current of Photoelectron Lithography” (Oct. 1989).

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