Electron-beam lithography system and method for drawing nanomete

Details Electron-beam lithography system and method for drawing nanomete Electron-beam lithography system and method for drawing nanomete

1995-09-14

1998-06-16

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3704

Patent

active

057675210

ABSTRACT:
An electron-beam lithography system employing an "electron holography" technique is disclosed. The system at least comprises: a shaping aperture for shaping an electron beam emitted from an electron-beam source so as to have a specific beam shape; at least two single crystal thin films for diffracting the electron beam passed through this shaping aperture; focusing means for respectively focusing the incident electron beam passed through these single crystal thin films and the diffracted electron beams diffracted by these single crystal thin films; and a select aperture for selecting only the desired diffracted electron beams. The transmitted incident electron beam interferes with the diffracted electron beams, whereby a stripe pattern having a desired nanometer-order pitch is formed on a resist surface coated onto a semiconductor substrate or a mask blank.

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Hirsch et al., "Periodic and Ordered Structures", Electron Microscopy of Thin Crystals, Chap. 15, pp. 357-365 (1965).

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