Electron beam lithography system

Details Electron beam lithography system Electron beam lithography system

1996-09-25

1997-08-26

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3730

Patent

active

056613075

ABSTRACT:
An electron beam lithography system capable of forming an aperture image on a material to be patterned in such a way that the current density distribution throughout the whole image is uniform, the current density is high, and the resolution is high. The system has an electron gun comprising a plurality of needle-like cathodes arranged in an array forming field emission electron sources. Electrons are extracted from the cathodes.

REFERENCES:
patent: 4117340 (1978-09-01), Goto et al.
patent: 4331875 (1982-05-01), Wolfe
patent: 5196707 (1993-03-01), Gesley
"A thermally assisted field emission electron beam exposure system", H. Nakazawa et al., J. Vac. Sci. Technol. B, vol. 6, No. 6, Nov./Dec. 1988, pp. 2019-2022.

Affiliated with

Also associated with

Rating

Electron beam lithography system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electron beam lithography system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron beam lithography system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1990018