Electron beam lithography system

Details Electron beam lithography system Electron beam lithography system

1995-08-15

1996-08-13

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049223, 250398, H01J 3730

Patent

active

055459021

ABSTRACT:
An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

REFERENCES:
patent: 4140913 (1979-02-01), Anger et al.
patent: 4198569 (1980-04-01), Takayama
patent: 4945246 (1990-07-01), Davis et al.

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