Electron beam lithography system

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 37256

Patent

active

053269799

ABSTRACT:
An electron beam lithography system which generates phase shift pattern data relating to main patterns, and exposes the phase shift pattern on a mask plate by using an electron beam in accordance with instruction from a computer. An electron beam lithography system is provided which can remarkably decrease a time needed for preparing phase shift pattern data. The apparatus is furnished with a parameter table for storing equations to generate phase shift pattern data, and generates the phase shift pattern data by assigning original pattern data into equations in accordance with a corresponding instruction for applying a phase shift method, and automatically exposes the phase shift pattern.

REFERENCES:
patent: 4947413 (1990-08-01), Jewell et al.
patent: 5085957 (1992-02-01), Hosono
patent: 5126220 (1992-06-01), Tokitomo et al.

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