Electron beam lithography method and apparatus separating repeti

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 3704

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053713737

ABSTRACT:
Not only for a memory device having a high repeatabitlity but also for a device having a low repeatability, there can be realized an electron beam lithography method which can carry out high speed processing of the device with a less number of lithography shots as well as an apparatus therefor. An input pattern is classified into repetitive and non-repetitive patterns. The classified non-repetitive pattern is further classified into unit areas, i.e., repetitive and no-repetitive unit patterns. Next, the non-repetitive unit patterns are converted into lithography data, while the repetitive unit patterns and repetitive patterns are composed on the lithography data of the non-repetitive unit patterns. A result of composing the repetitive unit patterns and repetitive patterns and the lithography data of the non-repetitive unit patterns is sorted according to a lithography sequence and output as the lithography data. Thus, the repetitive unit areas are extracted from the non-repetitive patterns and processed in the same manner as the repetitive patterns to thereby reduce the number of lithography shots.

REFERENCES:
patent: 4213053 (1980-07-01), Pfeiffer
patent: 5036209 (1991-07-01), Kataoka et al.
patent: 5082762 (1992-01-01), Takahaski
patent: 5250812 (1993-10-01), Murai et al.
patent: 5256881 (1993-10-01), Yamazaki

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