Electron beam lithography method and apparatus

Details Electron beam lithography method and apparatus Electron beam lithography method and apparatus

1989-04-24

1991-04-16

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

364490, 430296, H01J 37304

Patent

active

050085530

ABSTRACT:
A charged beam lithography writes a pattern with charged beams on a sample. The pattern involves various shapes. For every position in the shapes in the pattern, degree of exposure due to a proximity effect caused by backward scattering charged from the shapes surrounding the position is calculated. A charged beam emission quantity corresponding to the calculated degree of exposure is subtracted from a set emission quantity to compensate the proximity effect and obtain an optimum charged beam emission quantity for the position. With charged beams of the optimum emission quantities thus obtained, the pattern is written with high dimensional accuracy.

REFERENCES:
patent: 4500789 (1985-02-01), Ban et al.
Otto et al., "A Parallel Processing Approach to Proximity Correction", J. Vac. Sci. Technol. B6(6), Nov./Dec. 1988 pp. 2048-2052.
Parikh, "Corrections to Proximity Effects in Electron Beam Lithography", J. Appl. Phys. 50(6) Jun. 1979, pp. 4371-4387.

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