Electron beam lithography apparatus and method

Details Electron beam lithography apparatus and method Electron beam lithography apparatus and method

1997-04-24

1998-06-02

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37302

Patent

active

057604100

ABSTRACT:
An electron beam lithography apparatus is provided for drawing a exposure pattern on a sample by dividing the exposure pattern into a plurality of pattern elements and individually directing the electron beam to the sample at the pattern element. The size of the pattern element is adjusted in accordance with a gradient of a spatial variation of a back scattering dose. By doing so, it is possible to suppress distortion at the exposure area of one shot and to suppress an uneven edge of an exposure area row. If the size of the pattern element is made uniformly smaller, the drawing throughput is markedly lowered. The sizes of the pattern element varies in accordance with the gradient of a spatial variation of the back scattering dose and it is, therefore, possible to suppress a fall in the drawing throughput.

REFERENCES:
patent: 5305225 (1994-04-01), Yamaguchi et al.
patent: 5313068 (1994-05-01), Meiri et al.
patent: 5334282 (1994-08-01), Nakayama
patent: 5451487 (1995-09-01), Abe et al.

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