Electron beam lithography apparatus and a method thereof

Details Electron beam lithography apparatus and a method thereof Electron beam lithography apparatus and a method thereof

1993-05-20

1995-01-24

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37302

Patent

active

053844661

ABSTRACT:
The object of the invention is to provide an electron beam lithography apparatus and a method thereof which, while maintaining a predetermined pattern drawing accuracy, enables the pattern drawing speed to be improved still further. An electron beam lithography apparatus comprising exposing an electron beam 2 from an electron gun 1, interrupting the electron beam 2 by means of a blanker 6, further deflecting the electron beam 2 by applying a voltage to a deflector 7, wherein the electron beam lithography apparatus is characterized by selecting one of a first predetermined period of time required for the voltage of the deflector 7 to be stabilized and a second period of time which is shorter than the foregoing first period of time, and wherein the blanker 6 is operated according to the result of the foregoing selection.

REFERENCES:
patent: 4625121 (1986-11-01), Hamaguchi
patent: 4943729 (1990-07-01), Ando et al.

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