Electron beam lithography

Details Electron beam lithography Electron beam lithography

1981-08-03

1983-07-05

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3700

Patent

active

043920586

ABSTRACT:
In electron beam lithography apparatus a substrate, on which an exposure pattern is to be produced, is exposed to a plurality of electron beams. In a double beam arrangement one beam is capable of the highest resolution required and has a necessarily low writing speed. The other beam is relatively coarse in beam width but carries a higher current and has a much higher writing speed. Single-pole magnetic lens focusing is used with close angular spacing between the beams. Scanning of the pattern is programmed for economy of time so that the beams produce complementary portions of the pattern, the fine beam defining for example the edges of a structure while the coarse beam scans the area bounded by the edges. Scanning may be simultaneous or sequential. Selection of the relative values of beam potential and the use of energy selective detectors enable the two scanned regions to be imaged.

REFERENCES:
patent: 4075488 (1978-02-01), Okayama et al.
patent: 4199689 (1980-04-01), Takigawa
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4243866 (1981-01-01), Pfeiffer et al.

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