Electron beam lithographic method

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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H01J 3730

Patent

active

052065170

ABSTRACT:
An electron beam lithographic method in which a sample is irradiated with an electron beam, wherein an extreme point of a contour of a pattern is calculated and a lithographic area is divided into a first region that is surrounded by straight lines drawn from the extreme point in parallel with the x-axis and the y-axis of the sample and by said pattern, and second regions in order to be lithographed.

REFERENCES:
patent: 4147937 (1979-04-01), Buelow et al.
patent: 4420691 (1983-12-01), Zasio
patent: 4538232 (1985-08-01), Koyama
patent: 4878177 (1989-10-01), Ikenaga et al.

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