Electron beam lithographic method

Details Electron beam lithographic method Electron beam lithographic method

1986-08-26

1988-10-11

Anderson, Bruce C.

Radiant energy

With charged particle beam deflection or focussing

With target means

2504522, G01K 108, H01J 314

Patent

active

047773693

ABSTRACT:
An electron beam lithographic method for describing a fine pattern on the surface of a semiconductor specimen by irradiating the surface of the specimen with an electron beam.
The electron beam generated by an electron gun is converged onto a specimen through electron lenses. When a step of lithography has been finished, the electron beam is blanked by a shaping deflector that shapes the electron beam and that is disposed between a first shaping iris and a second shaping iris, so that the specimen is not damaged by the reflected electron beam or by the scattered electrons.

REFERENCES:
patent: 3949228 (1976-04-01), Ryan
patent: 4112305 (1978-09-01), Goto et al.
patent: 4423305 (1983-12-01), Pfeiffer
patent: 4445041 (1984-04-01), Kelly et al.
patent: 4550258 (1985-10-01), Omata et al.
"Variable Spot Shaping for Electron-Beam Lithography", Pfeiffer, J. Vac. Sci. Tech., vol. 15, No. 3, May 1978, pp. 887-890, 250-492.23.

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