Electron beam forming structure utilizing an ion trap

Details Electron beam forming structure utilizing an ion trap Electron beam forming structure utilizing an ion trap

1976-09-07

1978-02-21

Wilbur, Maynard R.

Electric lamp and discharge devices: systems

Combined load device or load device temperature modifying...

Distributed parameter resonator-type magnetron

313424, 313445, H01J 2956

Patent

active

040755339

ABSTRACT:
An electron beam forming structure includes an anode having first and second sections spaced from each other with the first section being closest to the cathode and having a beam-admitting aperture and being connected to a positive potential and the second section having a beam-limiting aperture and being connected to ground relative to the first section. The first section will repel positive ions created in an area adjacent the beam-limiting aperture and deflect them away from the source of the electron beam so they can be collected at the second section.

REFERENCES:
patent: 2717322 (1955-09-01), Ballard
patent: 2836752 (1958-05-01), Berthold
patent: 2921212 (1960-01-01), Berthold
patent: 2986668 (1961-05-01), Haflinger et al.

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