Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1995-05-25
1996-10-08
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37302
Patent
active
055634192
ABSTRACT:
In an electron beam exposure system, an electron beam is adjusted and is irradiated onto a number of pattern openings of a mask. The electron beam passed through the number of the pattern openings is deflected by deflection units and is irradiated onto a resist-coated target. The target is divided into a plurality of sub areas whose size corresponds to the size of the pattern openings. Exposure times are calculated for the sub areas so that energy deposited in the resist of the target is brought close to a definite energy.
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T. Abe et al., "Representative Figure Method for Proximity Effect Correction", Japanese Journal of Applied Physics, vol. 30, No. 38, Mar. 1991, pp. L528-L531.
F. Murai et al., "Fast proximity effect correction method using a pattern area density map", J. Vac. Sci. Technol. B, vol. 10, No. 6, Nov./Dec. 1992, pp. 3072-3076.
Berman Jack I.
NEC Corporation
Nguyen Kiet T.
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