Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-03-06
2000-03-07
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25049222, 2505051, 430 5, 430296, H01J 3704, H01J 37302
Patent
active
060343761
ABSTRACT:
To provide an electron-beam exposure system and a method applied therein for enabling control of an electron-beam current to be probed on a wafer surface at a fixed value using a simple process and without needing to prepare various shot sizes or changing emission current of the electron-beam source, the electron-beam exposure system comprises a beam-current adjustment filter having a number of electron-beam absorbent membranes positioned in a path of an electron-beam projected through one of a number of cell patterns used for cell projection lithography. Beam absorption coefficients of the electron-beam absorbent membranes are prepared to give a fixed current intensity of the electron-beam for each of the cell patterns and are determined by considering open space of the cell patterns.
REFERENCES:
patent: 5334282 (1994-08-01), Nakayama et al.
patent: 5895736 (1999-04-01), Nakajima
Hiroshi Yamashita et al., "Coulomb Interaction Effect in Cell Projection Lithography", Jpn. J. Appl. Phys., vol. 34, Part 1, No. 12B, Dec. 1995, pp. 6684-6688.
Partial English Translation of Japanese Patent Office Action dated Jul. 6, 1999.
Berman Jack I.
NEC Corporation
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