Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1991-06-20
1992-04-14
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 3704
Patent
active
051050897
ABSTRACT:
An electron exposure system comprises an electron source for emitting an electron beam in a path along a predetermined optical axis, a mask carrying a plurality of apertures corresponding to a pattern that is to be written on an object, a first deflector unit provided at a side of the mask closer to the electron source for shifting the electron beam from the optical axis by causing a deflection of the beam such that the electron beam passes through one of the apertures in the mask means in a direction substantially perpendicular to the mask, a second deflector unit provided at a side of the mask away from the electron source for shifting the electron beam such that the electron beam travels again in a path coincident with the optical axis, a focusing system for focusing the electron beam on the object, and a third deflector unit for deflecting the focused electron beam onto the object, wherein the mask further includes a calibration part having a size corresponding to an area within which the electron beam is shifted by the first deflection means. The calibration part includes a plurality of apertures of a predetermined size and disposed relatively to each other at a common, predetermined interval for calibrating the deflection of the electron beam caused by the first and second deflector units.
REFERENCES:
patent: 4140913 (1979-02-01), Anger et al.
patent: 4145597 (1979-03-01), Yasuda
patent: 4169230 (1979-09-01), Bohlen
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4914304 (1990-04-01), Koyama
patent: 5036209 (1991-07-01), Kataoka et al.
Berman Jack I.
Beyer James E.
Fujitsu Limited
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