Electron-beam exposure system

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492200, C250S492300

Reexamination Certificate

active

07375356

ABSTRACT:
An electron-beam exposure system includes: density-per-area map generating means configured to divide a certain area on which an electron beam is irradiated into meshes, to figure out a ratio of an area of patterns to be irradiated on each divided region to an area of the divided region, thus to generate a density-per-area map; and proximity-effect correcting means configured to correct exposure of the electron beam by referring to the density-per-area map. The proximity-effect correcting means includes: product-sum arithmetic means which is configured to perform product-sum arithmetic on two-dimensional array data, and addition means which is configured to perform addition arithmetic on the two-dimensional array data; stores, in a first memory, two-dimensional array data on the density per area of the patterns; performs the product-sum arithmetic and the addition a predetermined number of times, and thus calculates the two-dimensional array data on the density per area by a linear conversion; and uses the resultant data as two-dimensional array data on exposure to be used for correcting a proximity effect.

REFERENCES:
patent: 6515409 (2003-02-01), Muraki et al.
patent: 6828573 (2004-12-01), Kawano et al.
patent: 2006/0129967 (2006-06-01), Tanaka et al.
patent: 2003-218014 (2003-07-01), None

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