Electron beam exposure process for writing a pattern on an objec

Details Electron beam exposure process for writing a pattern on an objec Electron beam exposure process for writing a pattern on an objec

1992-08-06

1994-01-11

Dzierzynski, Paul M.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37302

Patent

active

052784193

ABSTRACT:
A method for writing a pattern on an object by a charged particle beam comprises the steps of: dividing a pattern to be written on the object into a plurality of pattern blocks that cause a proximity effect with each other; determining a pattern density for each of said pattern blocks; selecting a specific pattern block as a reference pattern block; setting a dose level of exposure of the charged particle beam to a reference dose level such that the reference pattern block is exposed with a predetermined total dose level which includes the contribution of the exposure by the charged particle beam and the contribution of the exposure by the backscattered charged particles; exposing the plurality of pattern blocks including the reference pattern block by the charged particle beam with the reference dose level; and exposing those pattern blocks that have the pattern density smaller than the pattern density of the reference pattern block by a defocused charged particle beam with a total dose level set such that the total dose level for those pattern blocks is substantially identical with the total dose level of the reference pattern block.

REFERENCES:
patent: 4500789 (1985-02-01), Ban et al.
patent: 4520269 (1985-05-01), Tone
patent: 4998020 (1991-03-01), Misaka et al.
patent: 5051598 (1991-09-01), Ashton et al.
Patent Abstracts of Japan, vol. 15, No. 250 (E-1082) 26 Jun. 1991 & JP-A-03 080 525 (Matsushita Electric Ind Co. Ltd) 5 Apr. 1991 * abstract *.

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