Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-03-01
2005-03-01
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492230, C250S492100
Reexamination Certificate
active
06861657
ABSTRACT:
An electron beam exposure mask comprises a main mask and one or more compensation masks. The main mask has a plurality of first defined masks. The compensation mask includes one or more non-defective second defined masks each having a pattern configuration to be formed in a defective among said first defined masks. In performing exposures by using this electron beam exposure mask, first defined masks are used as long as the first defined masks are non-defective, and the second defined mask corresponding to a first defined mask is used when the first defined mask is defective.
REFERENCES:
patent: 5885747 (1999-03-01), Yamasaki et al.
patent: 6090527 (2000-07-01), Yamazaki et al.
patent: 6180289 (2001-01-01), Hirayanagi
Katten Muchin Zavis & Rosenman
Lee John R.
NEC Electronics Corporation
Quash Anthony
LandOfFree
Electron beam exposure mask, electron beam exposure method,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electron beam exposure mask, electron beam exposure method,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron beam exposure mask, electron beam exposure method,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3442650